 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4308 DESCRIPTION *Low Noise *High Gain Bandwidth Product APPLICATIONS *Designed for use in VHF wide band amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 300 mA ICM Collector Current-Peak 500 mA PC Collector Power Dissipation @TC=25 0.6 W TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC4308 TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 100A ; IE= 0 30 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; RBE= 20 V ICBO Collector Cutoff Current VCB= 25V; IE= 0 1 A IEBO Emitter Cutoff Current VEB= 3V; IC= 0 10 A hFE DC Current Gain IC= 50mA ; VCE= 5V 50 200 fT Current-Gain--Bandwidth Product IC= 50mA ; VCE= 5V 1.5 2.5 GHz COB Output Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz 4.0 pF isc Websitewww.iscsemi.cn 2 INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4308 isc Websitewww.iscsemi.cn |
Price & Availability of 2SC4308
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |